Home
Class 12
PHYSICS
The forward characteristic of p-n juncti...

The forward characteristic of p-n junction is shown in Fig.What is the dynamical resistance of p-n junction at `0.9 V`?

A

`130 Omega`

B

`100 Omega`

C

`50 Omega`

D

`30 Omega`

Text Solution

Verified by Experts

The correct Answer is:
C
Dynamic resistance `R=(DeltaV)/(DeltaI)`
`=((1.0-0.8)V)/((10-6)mA)=(0.2V)/(4xx10^(-3)A)=50 Omega`
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

In a p-n junction

In a p-n junction–

The p-n junction is a :-

The P-N junction is-

Formation of P-N junction

P-N junction diodes

In forward biasing of the p-n junction:

P-N junction diode

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. For n-type semiconductor, it is stated that (i) there are more numbe...

    Text Solution

    |

  2. Suppose the energy liberated in the recombination of a hole-electron p...

    Text Solution

    |

  3. The forward characteristic of p-n junction is shown in Fig.What is the...

    Text Solution

    |

  4. In a forward biased PN- junction diode, the potential barrier in the d...

    Text Solution

    |

  5. What is the current through 1Omega resistance? Fig.

    Text Solution

    |

  6. In an NPN transistor the collector current is 24 mA. If 80% of electro...

    Text Solution

    |

  7. The conduction band of a solid is partially filled at 0 K.will it be a...

    Text Solution

    |

  8. In a good conductor of electricity the type of bonding that exists is ...

    Text Solution

    |

  9. In intrinsic semiconductor at room temperature, the number of electron...

    Text Solution

    |

  10. The forbidden energy band gap in conductors, semiconductors and insula...

    Text Solution

    |

  11. In an n-type semiconductor, the fermi level lies 0.3 eV below the cond...

    Text Solution

    |

  12. n-type semiconductor is obtained when

    Text Solution

    |

  13. A p-type semiconductor is obtained by doping silicon with

    Text Solution

    |

  14. In a p-type semiconductor the acceptor level is situated 60 m eV above...

    Text Solution

    |

  15. Which type of semiconductor is obtained by mixing arsenic with silicon...

    Text Solution

    |

  16. A semiconductor is cooled form T(1)K to T(2)K. Its resistance

    Text Solution

    |

  17. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  18. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  19. In the middle of the depletion layer of a reverse - biased p - n junc...

    Text Solution

    |

  20. The electrical resistance of depletion layer is large because

    Text Solution

    |