Home
Class 12
PHYSICS
The forbidden energy band gap in conduct...

The forbidden energy band gap in conductors, semiconductors and insulators are `EG_(1), EG_(2)` and `EG_(3)` respectively. The relation among them is

A

`E_(G1)=E_(G2)=E_(G3)`

B

`E_(G1) gt E_(G2) gt E_(G3)`

C

`E_(G1) lt E_(G2) lt E_(G3)`

D

`E_(G1) lt E_(G2) gt E_(G3)`

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

The forbidden energy band gap in conductors, semiconductors and insulators are EG_(1), EG_(2) and EG_(3) respectively. How are they related?

Which is the correct relation for forbidden energy gap in conductor, semi conductor and insulator

What is the range of energy gap ( E_g ) in insulators , semiconductors and conductors ?

The band gap of an insulator, conductor and semiconductor are respectively E_(g1) and E_(g2) and E_(g3). The relationship between them is given as______.

What is forbidden energy gap (Eg) or band gap?

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. In a good conductor of electricity the type of bonding that exists is ...

    Text Solution

    |

  2. In intrinsic semiconductor at room temperature, the number of electron...

    Text Solution

    |

  3. The forbidden energy band gap in conductors, semiconductors and insula...

    Text Solution

    |

  4. In an n-type semiconductor, the fermi level lies 0.3 eV below the cond...

    Text Solution

    |

  5. n-type semiconductor is obtained when

    Text Solution

    |

  6. A p-type semiconductor is obtained by doping silicon with

    Text Solution

    |

  7. In a p-type semiconductor the acceptor level is situated 60 m eV above...

    Text Solution

    |

  8. Which type of semiconductor is obtained by mixing arsenic with silicon...

    Text Solution

    |

  9. A semiconductor is cooled form T(1)K to T(2)K. Its resistance

    Text Solution

    |

  10. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  11. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  12. In the middle of the depletion layer of a reverse - biased p - n junc...

    Text Solution

    |

  13. The electrical resistance of depletion layer is large because

    Text Solution

    |

  14. What is the current in the circuit shown below?

    Text Solution

    |

  15. The built in potential of p-n junction diode is a function of

    Text Solution

    |

  16. A common emitter amplifier has a voltage gain of 50, an input impedenc...

    Text Solution

    |

  17. In an NPN transistor the collector current is 24 mA. If 80% of electro...

    Text Solution

    |

  18. A transistor is operated in common emitter configuration at V(c)=2 V s...

    Text Solution

    |

  19. An n-p-n transistor having a.c. current gain of 50 to be used to make ...

    Text Solution

    |

  20. Choose the corrector relation between the transistor parameters alpha ...

    Text Solution

    |