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The dominant mechanisms for motion of ch...

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

A

drift in forward biased, diffusion in reverse bias

B

diffusion in forward biased, drift in reverse bias

C

diffusion in both forward reverse bias

D

drift in both forward and reverse bias

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The correct Answer is:
B
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PRADEEP-ELECTRONIC DEVICES-Exercise
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  4. In the middle of the depletion layer of a reverse - biased p - n junc...

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  5. The electrical resistance of depletion layer is large because

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  6. What is the current in the circuit shown below?

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  7. The built in potential of p-n junction diode is a function of

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  9. In an NPN transistor the collector current is 24 mA. If 80% of electro...

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  10. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  11. An n-p-n transistor having a.c. current gain of 50 to be used to make ...

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  18. In Boolean algbra barA.barB rquals

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