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An n-type germanium is obtained, on dopi...

An n-type germanium is obtained, on doping intrinsic germaniurn, by

A

silicon

B

sulphur

C

aluminium

D

phosphorous

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The correct Answer is:
D
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NIKITA PUBLICATION-SEMICONDUCTORS-MCQS
  1. To obtain a P-type germanium semiconductor, it must be dopped with

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  2. An n-type semiconductor is

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  3. An n-type germanium is obtained, on doping intrinsic germaniurn, by

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  4. In an n-type semiconductor, the concentration of minority carriers mai...

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  5. When arsenic is added as an impurity to silicon, the resulting materia...

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  6. Semiconductor of both p-type and n-type are produced by

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  7. Semiconductor is damaged by the strong current due to

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  8. A p-type semiconductor is (i) a silicon crystal doped with arsenic i...

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  9. A hole in a P - type semiconductor is

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  10. In an n-type semiconductor donor level is

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  11. In a n-type semiconductor, which of the following statement is true?

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  12. The forbidden energy gap is maximum in

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  13. When boron is added as an impurity to silicon,the resulting material i...

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  14. In P-type semiconductor the majority and minorty charge carriers are r...

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  15. When a p-n junction diode is reverse biased the flow of current across...

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  16. If the forward voltage in a diode is increased, the width of the deple...

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  17. For rectifying an action, we use

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  18. In a semiconductor diode, reserve bias current is due to drift of free...

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  19. The depletion layer in P-N junction region is caused by

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  20. A p-n junction diode is said to be forward biased, when a potential di...

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