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A p-type semiconductor is (i) a silico...

A p-type semiconductor is
(i) a silicon crystal doped with arsenic impurity
(ii) a silicon crystal doped with aluminium impurity
(iii) a germanium crystal doped with boron impurity
(iv) a germanium crystal doped with phosphorus impurities.

A

(i) and (ii) are correct

B

(ii) and (iii) are correct

C

(i) and (iv) are correct

D

only (i) is correct

Text Solution

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The correct Answer is:
B
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NIKITA PUBLICATION-SEMICONDUCTORS-MCQS
  1. Semiconductor of both p-type and n-type are produced by

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  2. Semiconductor is damaged by the strong current due to

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  3. A p-type semiconductor is (i) a silicon crystal doped with arsenic i...

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  4. A hole in a P - type semiconductor is

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  5. In an n-type semiconductor donor level is

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  6. In a n-type semiconductor, which of the following statement is true?

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  7. The forbidden energy gap is maximum in

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  8. When boron is added as an impurity to silicon,the resulting material i...

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  9. In P-type semiconductor the majority and minorty charge carriers are r...

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  10. When a p-n junction diode is reverse biased the flow of current across...

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  11. If the forward voltage in a diode is increased, the width of the deple...

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  12. For rectifying an action, we use

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  13. In a semiconductor diode, reserve bias current is due to drift of free...

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  14. The depletion layer in P-N junction region is caused by

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  15. A p-n junction diode is said to be forward biased, when a potential di...

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  16. A diode converts A.C. voltage into

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  17. A p-n junction diode can not be used

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  18. When a p-n junction diode is reverse biased the flow of current across...

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  19. In an unblased p-n junction, holes diffuse from the p - region to n- r...

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  20. Assuming that the junction diode is ideal, the current in arrangement ...

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