Home
Class 12
PHYSICS
In an unbiased p-n junction diode the th...

In an unbiased p-n junction diode the thickness of the deplection layer is `7xx10^(-6)` m and the potential barrier is 0.7 V . The electric field in this region is

A

`10^(6) V m^(-1)`

B

`10^(5) Vm^(-1)`

C

`10^(-4) Vm^(-1)`

D

`10^(3) Vm^(-1)`

Text Solution

Verified by Experts

The correct Answer is:
B
`E=V/d =(0.7)/(7xx10^(-6))=1xx10^(5)V//m`
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    NIKITA PUBLICATION|Exercise MULTIPLE CHOICE QUESTIONS|405 Videos

  • STATIONARY WAVES

    NIKITA PUBLICATION|Exercise MCQs|396 Videos

Similar Questions

Explore conceptually related problems

In a p-n junction diode the thickness of deplection layer is 2 xx 10^(-6) m and barrier potential is 0.3 V . The intensity of the electrical field at the junction is.

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 0.1V . The electric field produced is

In a p-n junction, the thickness of the depletion layer is 10^(-6) m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

When the p-n junction diode is reverse biased, the thickness of the depletion layer

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

The depletion layer in diode is 1 mum wide and the knee potential is 0.6 V , then the electric field in the depletion layer will be

The depletion layer in a p-n junction diode is 10^(-6) m wide and its knee potential is 0.5 V, then the inner electric field in the depletion region is

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V (a) What will be the intensity of electric field in this region ? (b) if an electron, from n-side approaches the p-n junction with speed 5xx10^(5) m//s . then with what speed it will enter the p-side ?

NIKITA PUBLICATION-SEMICONDUCTORS-MCQS
  1. Digital circuit can be made by repetitive use of

    Text Solution

    |

  2. To get NOT gate from NAND gate, we need

    Text Solution

    |

  3. In an unbiased p-n junction diode the thickness of the deplection laye...

    Text Solution

    |

  4. In silicon diode, the reverse current increases from 10A to 20 muA . W...

    Text Solution

    |

  5. A P-N junction diode can withstand currents up to 10 mA. Under forward...

    Text Solution

    |

  6. An a.c. voltage of peak value 20 V is connected in series with a silic...

    Text Solution

    |

  7. Four silicon diodes are connected as shown in the figure. Assuming the...

    Text Solution

    |

  8. The circuit shown in figure (1) Contains two diodes each with a forwar...

    Text Solution

    |

  9. In a half wave rectifier output is taken across a 90 ohm load resistor...

    Text Solution

    |

  10. In a full wave rectifier output is taken across a load resistor of 800...

    Text Solution

    |

  11. If a change of 100 mu A in the base current of an n-p-n transistor in ...

    Text Solution

    |

  12. A transistor connected in common emitter mode, the voltage drop across...

    Text Solution

    |

  13. In a n-p-n transistor 10^(10) electrons enter the emitter in 10^(-6)s....

    Text Solution

    |

  14. Ap-n-p transistor is used in common-emitter mode in an amplifier circu...

    Text Solution

    |

  15. The current gain 'a' of a transistor is 0.95 . What would be the chang...

    Text Solution

    |

  16. A transistor connected in common emitter configuration has input resis...

    Text Solution

    |

  17. Which of the following diodes is forward biased ?

    Text Solution

    |

  18. Which of the following diodes is reverse biased?

    Text Solution

    |

  19. In which of the following figure the junction diode is reverse biased ...

    Text Solution

    |

  20. In the figure shown, current passing through the diode is

    Text Solution

    |