Home
Class 12
PHYSICS
If V(1) gt V(2), r is resistance offered...

If `V_(1) gt V_(2), r` is resistance offered by diode in forward bias then current through the diode is.
.

A

0

B

`(V_(1)+V_(2))/(R+r)`

C

`(V_(1)-V_(2))/(R+r)`

D

none of these

Text Solution

Verified by Experts

The correct Answer is:
C

`I=V/R=(V_(1)-V_(2))/(R+r)`
Promotional Banner

Topper's Solved these Questions

  • ROTATIONAL MOTION

    NIKITA PUBLICATION|Exercise MULTIPLE CHOICE QUESTIONS|405 Videos
  • STATIONARY WAVES

    NIKITA PUBLICATION|Exercise MCQs|396 Videos

Similar Questions

Explore conceptually related problems

Assume that each diode shown has a forward bias resistance of 50Omega and an infinite reverse bias resistance. The current through the resistance 150Omega is

Assuming that the silicon diode having resistance of 20 Omega , the current through the diode is (knee voltage 0.7 V)

The circuit shown in figure (1) Contains two diodes each with a forward resistance of 50 ohm and with infinite reverse resistance. If the battery voltage is 6 V , the current through the 100 ohm resistance is. .

In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

In the figure, the reverse breakdown voltage of a Zener diode is 5.6V, then the current I_(Z) through the diode is

NIKITA PUBLICATION-SEMICONDUCTORS-MCQS
  1. In the figure shown, current passing through the diode is

    Text Solution

    |

  2. The resitance of the diode in forward bias condition is 20Omega and in...

    Text Solution

    |

  3. If V(1) gt V(2), r is resistance offered by diode in forward bias then...

    Text Solution

    |

  4. If an ideal diode is used in the given circuit, find the current throu...

    Text Solution

    |

  5. In the figure shown the readings of the ammeters A(1) and A(2) are res...

    Text Solution

    |

  6. In an n-p-n transistor circuit, the collector current ia 10 mA. If 90%...

    Text Solution

    |

  7. In a p-n-p transistor circuit, the collector current is 10mA , If 95% ...

    Text Solution

    |

  8. In a p-n-p transistor in CB circuit, the emitter current changes from ...

    Text Solution

    |

  9. The input resistance of a silicon transistor is 665Omega. Its base cur...

    Text Solution

    |

  10. A silicon diode is forward biased, as shown in figure by connecting i...

    Text Solution

    |

  11. In a p-n-p transistor operating as amplifier with common emitter confi...

    Text Solution

    |

  12. A p-n-p transistor is used as common base amplifier as V(eb) =3V . Whe...

    Text Solution

    |

  13. A full-wave rectifier circuit is operating at n Hz mains frequency . ...

    Text Solution

    |

  14. A cell of emf. 4.5 V is connected to a junction diode whose barrier po...

    Text Solution

    |

  15. The barrier potential in a p-n junction diode is 0.3 volts . The curre...

    Text Solution

    |

  16. A diode made of silicon has a barrier potential of 0.7 V and a current...

    Text Solution

    |

  17. In CE configuration of a transistor, input resistance is 2 K Omega...

    Text Solution

    |

  18. In a common emitter amplifier, using output reisistance of 5000 ohm an...

    Text Solution

    |

  19. In a common base transistor amplifier if the input resistance R(i) is ...

    Text Solution

    |

  20. The major constituent of transistor are

    Text Solution

    |