Home
Class 12
PHYSICS
Semiconductor is damaged by the strong ...

Semiconductor is damaged by the strong current due to

A

excess of electrons

B

decrease in electrons

C

lack of free electrons

D

none of these

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Critical thinking|32 Videos
  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Competitive thinking|110 Videos
  • ROTATIONAL MOTION

    TARGET PUBLICATION|Exercise MCQ|245 Videos
  • STATIONARY WAVES

    TARGET PUBLICATION|Exercise EVALUATION TEST|16 Videos

Similar Questions

Explore conceptually related problems

Why is the semiconductor damaged by a strong current?

(i) A transistor has a current gain of 30. If the collector resistance is 6 K Omega and input resistance is 1 K Omega , calculate its voltage gain. (ii) Why is a semiconductor damaged by strong current ?

In a semiconductor diode, reserve bias current is due to drift of free electrons and holes caused by

When a battery is connected to a P -type semiconductor with a metallic wire, the current in the semiconductor (predominantly), inside the metallic wire and that inside the battery respectively due to

when the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be

Through a semiconductor, an electric current is due to drift of

In intrinsic semiconductor at room of current carriers would be

TARGET PUBLICATION-SEMICONDUCTORS-Evaluation Test
  1. Semiconductor is damaged by the strong current due to

    Text Solution

    |

  2. Which of the energy band diagrams shown in the figure corresponds to t...

    Text Solution

    |

  3. A zener-regulated power supply consists of a 9 V battery connected in ...

    Text Solution

    |

  4. The current gain of a transistor is 0.94. The change in collector curr...

    Text Solution

    |

  5. For a photodiode, the forbidden energy gap (Eg) of the material used i...

    Text Solution

    |

  6. If the two ends p and n of p-n junction diode are joined by a wire,

    Text Solution

    |

  7. Assertion : A transistor amplifier in common emitter configuration ha...

    Text Solution

    |

  8. Assertion : In a transistor the base is made thin. Reason: A thin b...

    Text Solution

    |

  9. Carbon, silicon and germanium have four valence electrons each. The mo...

    Text Solution

    |

  10. The input resistance of a CE amplifier is 400 Omega and the load resis...

    Text Solution

    |

  11. The number densities of electrons and holes in a pure germanium at roo...

    Text Solution

    |

  12. For a transistor amplifier, the voltage gain

    Text Solution

    |

  13. A common-emitter amplifier, has an input resistance of 500Omega and an...

    Text Solution

    |

  14. A p-n junction diode when forward biased has a drop of 0.4 V which is ...

    Text Solution

    |

  15. A transistor has alpha=0.96. If the emitter current is 8 mA, what are ...

    Text Solution

    |

  16. In an n-p-n transistor 10^(10) electrons enter the emitter in 10^(-6) ...

    Text Solution

    |

  17. A transistor is connected in common-emitter (CE) configuration.The col...

    Text Solution

    |

  18. The maximum wavelength which a photodiode can detect with Eg=0.74 eV i...

    Text Solution

    |