On doping germanium metal with a little ...

On doping germanium metal with a little amount of indium, one gets

a rectifier

an n-type semiconductor

an insulator

a p-type semiconductor

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On doping Ge with a little of In or Ga one gets

A semiconductor material x is made by doping a germanium crystal with indium another semiconductor material y is made by doping a x nad y ar then joined together and connected to a battery will the jucntion be forward or reverse biased also draw the V-I characteristics for the circuit

What is amount of doping tansistor ?

On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.

On doping germanium with donor atoms of density 10^(17) cm^(-3) , find its conductivity in mho/cm, if mu=3800 cm^(2)//V-s .

A semiconductor X is made by dopping a germanium crystal with arsenic (Z=33) . A scond semiconductor Y is made by dopping germanium with indium (Z=49) . The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6xx10^19 per cubic per cubic metre.When some phosphorus impurity is doped into a germanium sample, the concentration of conduction electrons increases to 2xx10^28 per cubic metre.Find the concentration of the holes in the doped germanium.

Which of the following elements on doping with germanium, takes if a p-type semiconductor?

Assertion : Conductivity of silicon increases by doping it with group-15 elements. Reason : Doping means introduction of small amount of impurities like P, As or Bi into the pure crystal.

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