Home
Class 12
PHYSICS
Avalanche breakdown in a semi conductor ...

Avalanche breakdown in a semi conductor diode occurs when

A

when potential barrier is reduced to zero.

B

when reverse bias exceeds a certain value.

C

when forward bias exceeds a certain value.

D

when forward current exceeds a certain value.

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Critical thinking|32 Videos
  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Competitive thinking|110 Videos
  • ROTATIONAL MOTION

    TARGET PUBLICATION|Exercise MCQ|245 Videos
  • STATIONARY WAVES

    TARGET PUBLICATION|Exercise EVALUATION TEST|16 Videos

Similar Questions

Explore conceptually related problems

Zener breakdown in a semi-conductor diode occurs when

Avalanche breakdown in a PN junction diode is to

Avalanche breakdown is due to

Just before the reverse breakdown in a semiconductor diode -

An n-type semi- conductor is

Avalanche breakdown in a Zener diode takes place due to

Avalanche breakdown is obtained in a p-n junction when there is

Zener breakdown occurs

The breakdown in a reverse biased p-n junction diode is more likely to occur due to

In a P -type semi-conductor

TARGET PUBLICATION-SEMICONDUCTORS-Evaluation Test
  1. Avalanche breakdown in a semi conductor diode occurs when

    Text Solution

    |

  2. Which of the energy band diagrams shown in the figure corresponds to t...

    Text Solution

    |

  3. A zener-regulated power supply consists of a 9 V battery connected in ...

    Text Solution

    |

  4. The current gain of a transistor is 0.94. The change in collector curr...

    Text Solution

    |

  5. For a photodiode, the forbidden energy gap (Eg) of the material used i...

    Text Solution

    |

  6. If the two ends p and n of p-n junction diode are joined by a wire,

    Text Solution

    |

  7. Assertion : A transistor amplifier in common emitter configuration ha...

    Text Solution

    |

  8. Assertion : In a transistor the base is made thin. Reason: A thin b...

    Text Solution

    |

  9. Carbon, silicon and germanium have four valence electrons each. The mo...

    Text Solution

    |

  10. The input resistance of a CE amplifier is 400 Omega and the load resis...

    Text Solution

    |

  11. The number densities of electrons and holes in a pure germanium at roo...

    Text Solution

    |

  12. For a transistor amplifier, the voltage gain

    Text Solution

    |

  13. A common-emitter amplifier, has an input resistance of 500Omega and an...

    Text Solution

    |

  14. A p-n junction diode when forward biased has a drop of 0.4 V which is ...

    Text Solution

    |

  15. A transistor has alpha=0.96. If the emitter current is 8 mA, what are ...

    Text Solution

    |

  16. In an n-p-n transistor 10^(10) electrons enter the emitter in 10^(-6) ...

    Text Solution

    |

  17. A transistor is connected in common-emitter (CE) configuration.The col...

    Text Solution

    |

  18. The maximum wavelength which a photodiode can detect with Eg=0.74 eV i...

    Text Solution

    |