Home
Class 12
PHYSICS
In the working of n-p transistor, the nu...

In the working of n-p transistor, the number of free electrons which recombine with holes in the base layer is about.

A

`97%` of the number injected into the base.

B

`50%` of the number injected into the base.

C

`3%` of the number of injected into the base.

D

`25%` of the number injected into the base.

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Critical thinking|32 Videos

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Competitive thinking|110 Videos

  • ROTATIONAL MOTION

    TARGET PUBLICATION|Exercise MCQ|245 Videos

  • STATIONARY WAVES

    TARGET PUBLICATION|Exercise EVALUATION TEST|16 Videos

Similar Questions

Explore conceptually related problems

In an n-p-n transistor

The symbol of p-n-p transistor is

In a p-n-p transistor, the n-type crystal works as a

In CE NPN transistor 10^(10 electrons enter the emitter in 10^(-6) s when it is connected to battery. About 5% electrons recombine with holes in the base. The current gain of the transistor is ……. . (e=1.6xx10^(-19)C)

The mobility of free electrons is greater then that of free holes because

Assertion : when a pure semiconductor is doped with a trivalen impurity the number of hols becomes more than the number of electrons Reason Electrons get recombined with the holes as their concentration increases on addition of trivalent impurity so number of holes become more

In n-p-n transistor the emitter current will be equal to

The number of depletion layers in a transistor is

TARGET PUBLICATION-SEMICONDUCTORS-Evaluation Test
  1. In the working of n-p transistor, the number of free electrons which r...

    Text Solution

    |

  2. Which of the energy band diagrams shown in the figure corresponds to t...

    Text Solution

    |

  3. A zener-regulated power supply consists of a 9 V battery connected in ...

    Text Solution

    |

  4. The current gain of a transistor is 0.94. The change in collector curr...

    Text Solution

    |

  5. For a photodiode, the forbidden energy gap (Eg) of the material used i...

    Text Solution

    |

  6. If the two ends p and n of p-n junction diode are joined by a wire,

    Text Solution

    |

  7. Assertion : A transistor amplifier in common emitter configuration ha...

    Text Solution

    |

  8. Assertion : In a transistor the base is made thin. Reason: A thin b...

    Text Solution

    |

  9. Carbon, silicon and germanium have four valence electrons each. The mo...

    Text Solution

    |

  10. The input resistance of a CE amplifier is 400 Omega and the load resis...

    Text Solution

    |

  11. The number densities of electrons and holes in a pure germanium at roo...

    Text Solution

    |

  12. For a transistor amplifier, the voltage gain

    Text Solution

    |

  13. A common-emitter amplifier, has an input resistance of 500Omega and an...

    Text Solution

    |

  14. A p-n junction diode when forward biased has a drop of 0.4 V which is ...

    Text Solution

    |

  15. A transistor has alpha=0.96. If the emitter current is 8 mA, what are ...

    Text Solution

    |

  16. In an n-p-n transistor 10^(10) electrons enter the emitter in 10^(-6) ...

    Text Solution

    |

  17. A transistor is connected in common-emitter (CE) configuration.The col...

    Text Solution

    |

  18. The maximum wavelength which a photodiode can detect with Eg=0.74 eV i...

    Text Solution

    |