Home
Class 12
PHYSICS
Assertion : The energy gap between the v...

Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium.
Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.

A

Assertion is True, Reason is True, Reason is a correct explanation for Assertion

B

Assertion is True, Reason is True, Reason is not a correct explanation for Assertion.

C

Assertion is True, Reason is False.

D

Assertion is False but, Reason is True.

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Evaluation Test|17 Videos

  • SEMICONDUCTORS

    TARGET PUBLICATION|Exercise Critical thinking|32 Videos

  • ROTATIONAL MOTION

    TARGET PUBLICATION|Exercise MCQ|245 Videos

  • STATIONARY WAVES

    TARGET PUBLICATION|Exercise EVALUATION TEST|16 Videos

Similar Questions

Explore conceptually related problems

If the energy gap between valence band and conduction band is 5 eV, then it is

The energy gaps (E_(g)) between valence band and conduction band for diamond, silicon and germanium are in the order

If the energy gap between valence band and conduction band is 10 eV, then the material is a/an

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

TARGET PUBLICATION-SEMICONDUCTORS-Competitive thinking
  1. The band gap of an insulator, conductor and semiconductor are respecti...

    Text Solution

    |

  2. Three semi-conductor are arranged in the increasing order of their ene...

    Text Solution

    |

  3. Assertion : The energy gap between the valence band and conduction ban...

    Text Solution

    |

  4. To a germanium sample, traces of gallium are added as an impurity. The...

    Text Solution

    |

  5. When phosphorus and antimony are mixed in germanium, then

    Text Solution

    |

  6. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

    Text Solution

    |

  7. In extrinsic semiconductors-

    Text Solution

    |

  8. Serious draw back of the semiconductor device is

    Text Solution

    |

  9. The density of an electron-hole pair in a pure germanium is 3xx 10^(1...

    Text Solution

    |

  10. A semiconductor has equal electron and hole concentration of 2xx10^(8)...

    Text Solution

    |

  11. The majority charge carriers in P -type semiconductor are

    Text Solution

    |

  12. A P -type semiconductor can be obtained by adding

    Text Solution

    |

  13. P-type semiconductors are made by adding impurity element

    Text Solution

    |

  14. In a n-type semiconductor, which of the following statement is true?

    Text Solution

    |

  15. If n(e) and n(h) are the number of electrons and holes in a semiconduc...

    Text Solution

    |

  16. In n type semiconductor, electrons are majority charge carriers but it...

    Text Solution

    |

  17. When N-type of semiconductor is heated

    Text Solution

    |

  18. PN-junction diode works as a insulator, if connected

    Text Solution

    |

  19. With forward biased mode, the p-n junction diode

    Text Solution

    |

  20. The forward biased diode comection is

    Text Solution

    |