Statement 1: Doping concentration is maximum in emitter in transistor.
Statement 2: Maximum number of electrons flows from emitter to base in n-p-n transistor.

Emitter base and collector base junction in n-p-n transistor are

Most of the electron in the base of N-P-N transistor flow

In n-p-n transistor the emitter current will be equal to

In an n-p-n transistor, the emitter current is

In an n-p-n transistor, the emitter current is

Consider an n-p-n transistor with its base - emitter junction forward biased and collector base junction reverse biased . Which of the following statements are true? a) electrons crossover from emitter to collector. b) Holes move from base to collector c) Electrons move from emitter to base d) Electrons from emitter move out of base without going to the collector

In a transistor the base is very lightly doped as compared to the emitter because by doing so -

In a transistor the base is very lightly doped as compared to the emitter because by doing so -