An intrinsic semiconductor has a resistivity of 0.50 `Omega` m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are `0.39 m^2 V^(-1) s^(-1)` and `0.11 m^2 V^(-1) s^(-1)` respectively

Find the current produced at room temperature in a pure germanium plate of area 2 xx 10^(-4) m^(2) and of thickness 1.2 xx 10^(-3) m when a potential of 5 V is applied across the faces. Concentration of carries in germanium at room temperature is 1.6 xx 10^(6) per cubic metre. The mobilities of electrons and holes are 0.4 m^(2) V^(-1) s^(-1) and 0.2 m^(2) V^(-1) s^(-1) respectively. The heat energy generated in the plate in 100 second is.

The intrinsic conductivity of germanium at 27^(@) is 2.13 mho m^(-1) and mobilities of electrons and holes are 0.38 and 0.18 m^(2) V^(-1) s^(-1) respectively. The density of charge carriers is

A type semiconductor sample has electron and hole concentration of 1.6 xx 10^(19) the electron and hole mobility in the sample is 1.2 m^(2) v^(-1) s^(-1) and 0.001 m^(2)v^(-1) s^(-1) respectively calculate the value of resistivity of the sample