The width of the depletion region in a p-n junction diode is 400 nm and an intense electric field of `8 xx 10^5` V/m exists in it. What is the kinetic energy which a conduction electron must have in order to diffuse from then region to p region?

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?

The width of depletion region in PN–junction diode is 500 nm and an internal electric field is 6 x 10^5 V/m . What is the kinetic energy which a conduction electron must have in order to diffuse from the N side to P side :-