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A semiconductor of Ge can be made p-type...

A semiconductor of `Ge` can be made `p`-type by adding

A

trivalent impurity

B

tetravalent impurity

C

pentavalent impurity

D

divalent impurity

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1

Electron -deficit `Ge` is called `p-type` semiconductor when `Ge` is doped with trivalent impurity (Froup `13` elements) like `B` the `Ge` atoms of some lattice sites are displaced by those of `B`. Now as Group `13` elements have only three valence electrons ,they can form three covalen tbonds with the neighbouring `Ge` atoms.Thus a hole is created at the site where fourth electron is missing.This is called electron hole or electron vacancy.
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