The intrinsic conductivity of germanium at `27^(@)` is 2.13 mho `m^(-1)` and mobilities of electrons and holes are 0.38 and `0.18 m^(2) V^(-1) s^(-1)` respectively. The density of charge carriers is

The intrinsic conductivity of germanium at 27^(@)C is 2.13ohm^(-1)*m^(-1) , the mobilities of electrons and holes are 0.38 and 0.18m^(2)//(V*s) , respectively. Compute the carrier densities and the Hall coefficient.

Find the current produced at room temperature in a pure germanium plate of area 2 xx 10^(-4) m^(2) and of thickness 1.2 xx 10^(-3) m when a potential of 5 V is applied across the faces. Concentration of carries in germanium at room temperature is 1.6 xx 10^(6) per cubic metre. The mobilities of electrons and holes are 0.4 m^(2) V^(-1) s^(-1) and 0.2 m^(2) V^(-1) s^(-1) respectively. The heat energy generated in the plate in 100 second is.

A potential difference of 2.5 V is applied across the faces of a germanium crystal plate. The face area of the crystal is 1 cm^(2) and its thickness is 1.0 mm . The free electron concentration in germanium is 2 xx 10^(19)m^(-3) and the electron and holes mobilities are 0.33m^(2)/V s and 0.17 m^(2)/V s respectively. The current across the plate will be

If resistivity of pure silicon is 3000 Omega m and the electron and hole mobilities are 0.12m^(2)v^(-1)s^(-1) and 0.045 m^(2)v^(-1)s^(-1) respectively, determine. The resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) Given e=1.6 xx10^(-19) c, rho =3000Omega, u_(e)=0.12m^(2)v^(-1)s^(-1), u_(h)=0.045m^(2)v^(-1)s^(-1)