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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

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For a doped semiconductor in thermal equilibrium
`n_(e)n_(h)=n_(i)^(2)`
`n_(e)=(n_(i)^(2))/(n_(h))=((1.5xx10^(16))^(2))/(4.5xx10^(22))=5xx10^(9)m^(-3)`
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CP SINGH-SEMICONDUCTORS-Exercises
  1. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  2. Which of the followin is correct regarding band theroy of solids?

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  3. In isulators

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  4. In an insulator, the forbidden energy gap between the valence band and...

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  5. In an insulator, the forbidden energy gap between the valence band and...

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  6. A hole in a semiconductor is

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  7. Electric conduction in a semiconductor takes place due to

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  8. In a semiconductor, (i)there are no free elctrons at 0K (ii) there...

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  9. A pure semiconductor has

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  10. when the electrical conductivity of a semiconductor is due to the brea...

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  11. In an intrinsic semiconductor

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  12. Let n(p) and n(e), be the numbers of holes and condution electrons in ...

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  13. If tempreture is increased, the number of electron-hole pairs increase...

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  14. A strip of copper and another of germanium are cooled from room tempre...

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  15. An electric field us applied to a semiconductor.Let the number of char...

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  16. Solids having highest energy level partially filled with electrons are

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  17. In semiconductors at a room tempreture

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  18. The state of the energy gained by valence electrons when the temperatu...

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  19. Energy band in solids are a consequence of

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  20. Which of the following is semi-conductor?

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  21. Carbon , silicon and germanium have four valence elcectrons each . The...

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