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Carbon , silicon and germanium have four...

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to ` (E_g)_(c) (E_g)_(si) ` and ` (E_g)_(Ge) `. Which of the following statements ture ?

A

`E_(g)(Si)ltE_(g)(Ge)ltE_(g)(C )`

B

`E_(g)(Ge)ltE_(g)(Si)ltE_(g)(C )`

C

`E_(g)(Si)ltE_(g)(Ge)gtE_(g)(C )`

D

`E_(g)(Si)ltE_(g)(Ge)gtE_(g)(C )`

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The correct Answer is:
B
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Carbon silicon and germanium have four valence electrons each these are characterised by valence and conduction bands separated by energy band gap respectively equal to which of the following statement is true (a) (E_(g))_(Si)lt(E_(g))_(Ge)lt(E_(g))_(c ) (b) (E_(g))_(c )lt(E_(g))_(Gelt(E_(g))_(Si) (c ) (E_(g))_(c )gt(E_(g))_(Si)gt(E_(g))_(Ge) (d)(E_(g))_(c )=(E_(g))_(si)=(E_(g))_(Ge)

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (E_(g))_(C),(E_(g))_(Si) and (E_(g))_(Ge) , respectively. Which one of the following relationship is true in their case?

Carbo , silicon and Germanitum atomshave four valence electrons each . Their velence and conduction bands are separeated by energy nands gaps represented by (E_g)_C , (E_g)_(Si), (E_g)_(Ge) repectively . Which relativon is correct ?

Carbon, silicon and germanium have four valence electrons each. The most appropriate statement for these elements (at room temperature) is

CP SINGH-SEMICONDUCTORS-Exercises
  1. Energy band in solids are a consequence of

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  2. Which of the following is semi-conductor?

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  3. Carbon , silicon and germanium have four valence elcectrons each . The...

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  4. Carbon , silicon and germanium have four valence electrons each . At r...

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  5. C and Si both have same lattice structure, having 4 bonding electrons ...

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  6. The difference in the variation of resistance with temperature in a me...

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  7. The probbility of electrons to be found in the conduction band of an i...

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  8. In a semiconducting material the mobilities of electrons and holes are...

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  9. The electrical conductivity of pure germanium can be increased by

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  10. A semiconductor is doped with a donor impurity

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  11. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  12. The impurity atoms with which pure silicon should be doped to make a p...

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  13. The impurity atoms with which pure silicon may be droped to make it a ...

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  14. Choose the correct option

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  15. Majority carriers in a semiconductor are

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  16. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  17. Which of the following statements is not true?

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  18. Which statement is correct?

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  19. The valance of the impurity atom that is to be added to germanium cry...

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  20. When N-type of semiconductor is heated

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