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The difference in the variation of resis...

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

A

variation of scattering mechanism with tempreture

B

crystel structure

C

variation of the number of chrge carries with tempreature

D

type of bond

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The correct Answer is:
C
NA
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CP SINGH-SEMICONDUCTORS-Exercises
  1. Carbon , silicon and germanium have four valence electrons each . At r...

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  2. C and Si both have same lattice structure, having 4 bonding electrons ...

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  3. The difference in the variation of resistance with temperature in a me...

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  4. The probbility of electrons to be found in the conduction band of an i...

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  5. In a semiconducting material the mobilities of electrons and holes are...

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  6. The electrical conductivity of pure germanium can be increased by

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  7. A semiconductor is doped with a donor impurity

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  8. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  9. The impurity atoms with which pure silicon should be doped to make a p...

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  10. The impurity atoms with which pure silicon may be droped to make it a ...

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  11. Choose the correct option

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  12. Majority carriers in a semiconductor are

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  13. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  14. Which of the following statements is not true?

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  15. Which statement is correct?

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  16. The valance of the impurity atom that is to be added to germanium cry...

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  17. When N-type of semiconductor is heated

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  18. A N-type silicon sample of width 4xx10^(-3)m, thickness and length 6xx...

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  19. A semiconductor has an electron concentration of 8xx10^(13) per cm^(3)...

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  20. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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