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The probbility of electrons to be found ...

The probbility of electrons to be found in the conduction band of an intrinsit semiconductor at a finile temperature

A

decrease exponentially with increasing band gap

B

increases exponentially with increasing band gap

C

decrease with increasing tempreture

D

is independent of the tempreture and the band gap

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The correct Answer is:
A

NA
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CP SINGH-SEMICONDUCTORS-Exercises
  1. C and Si both have same lattice structure, having 4 bonding electrons ...

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  2. The difference in the variation of resistance with temperature in a me...

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  3. The probbility of electrons to be found in the conduction band of an i...

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  4. In a semiconducting material the mobilities of electrons and holes are...

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  5. The electrical conductivity of pure germanium can be increased by

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  6. A semiconductor is doped with a donor impurity

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  7. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  8. The impurity atoms with which pure silicon should be doped to make a p...

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  9. The impurity atoms with which pure silicon may be droped to make it a ...

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  10. Choose the correct option

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  11. Majority carriers in a semiconductor are

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  12. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  13. Which of the following statements is not true?

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  14. Which statement is correct?

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  15. The valance of the impurity atom that is to be added to germanium cry...

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  16. When N-type of semiconductor is heated

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  17. A N-type silicon sample of width 4xx10^(-3)m, thickness and length 6xx...

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  18. A semiconductor has an electron concentration of 8xx10^(13) per cm^(3)...

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  19. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  20. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

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