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The valance of the impurity atom that is...

The valance of the impurity atom that is to be added to germanium crystal so as to make it a `N`-type semiconductor, is

A

`6`

B

`5`

C

`4`

D

`3`

Text Solution

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The correct Answer is:
B
NA
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CP SINGH-SEMICONDUCTORS-Exercises
  1. Which of the following statements is not true?

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  2. Which statement is correct?

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  3. The valance of the impurity atom that is to be added to germanium cry...

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  4. When N-type of semiconductor is heated

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  5. A N-type silicon sample of width 4xx10^(-3)m, thickness and length 6xx...

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  6. A semiconductor has an electron concentration of 8xx10^(13) per cm^(3)...

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  7. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  8. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

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  9. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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  10. Which of the following energy band diagrams shows the N-type semicondu...

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  11. The energy band diagrams for three semiconductor samples of silicon ar...

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  12. In the energy band diagram of a material shown below, the open circles...

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  13. The dominant mechanisms for motion of charge carriers in forward and r...

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  14. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  15. In a p-n junction (i) new holes and conduction electrons are produce...

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  16. In the case of forward biasing of PN-junction, which one of the follow...

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  17. To make a PN junction conducting

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  18. A potential barrier of 0.50 V exists across a P-N junction. If the de...

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  19. The reverse biasing in a PN junction diode

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  20. The cause of the potential barrier in a PN diode is

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