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CP SINGH-SEMICONDUCTORS-Exercises
- A N-type silicon sample of width 4xx10^(-3)m, thickness and length 6xx...
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- A semiconductor has an electron concentration of 8xx10^(13) per cm^(3)...
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- A Ge specimen is dopped with Al. The concentration of acceptor atoms i...
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- Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...
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- A silicon specimen is made into a P-type semiconductor by dopping, on ...
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- Which of the following energy band diagrams shows the N-type semicondu...
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- The energy band diagrams for three semiconductor samples of silicon ar...
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- In the energy band diagram of a material shown below, the open circles...
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- The dominant mechanisms for motion of charge carriers in forward and r...
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- A hole diffuses from the p-side to the n-side in a p-n junction.This m...
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- In a p-n junction (i) new holes and conduction electrons are produce...
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- In the case of forward biasing of PN-junction, which one of the follow...
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- To make a PN junction conducting
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- A potential barrier of 0.50 V exists across a P-N junction. If the de...
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- The reverse biasing in a PN junction diode
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- The cause of the potential barrier in a PN diode is
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- The potential barrier, in the depletion layer, is due to
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- Barrier potential of a p-n junction diode does not depend on
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- The depletion layer in P-N junction region is caused by
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- In a p- n junction diode not connected to any circuit,
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