The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Options

A. drift in forward bias, diffusion in reverse bias
B. diffusion in forward bias, drifft in reverse bias
C. diffusion in both forward and reverse bias
D. drift in both forward and reverse bias

Answer

B

Explanation

In forward bias, diffusion current increases, drift current remains almost same, net current is due to diffusion.
In reverse bias, diffusion current decrease, net current (nwgligible small)` is due to drift.