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A hole diffuses from the p-side to the n...

A hole diffuses from the p-side to the n-side in a p-n junction.This means that

A

a bond is broken on the `n`-side and the electron freed from the bond jumps to the conduction band

B

a conduction electron on the `p`-side jumps to a broken bond to complete it

C

a bond is broken on the `n`-side and the electron freed from the bond jumps to a broken bond on the `p`-side to complete it

D

a bond is broken on the `p`-side and the electron freed from the bond jumps on the `p`-side and the electron freed from the bond jumps to a broken bond on the `n`-side to complete it

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The correct Answer is:
C
NA
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When a p-type impurity is doped in a semiconductor,a large number of holes are created. This does not make the semiconductor chared.But when holes diffuse from the p-side to the n-side in a p-n junction,the n-side gets positvely charged.Explain.

The potential barrier exists across the junction is 0.2volt.What minimm kinetic energy a hole should have to diffuse from the p-side to the n-side if (a)the junction is unbiased,(b)the junction is forward-biased at 0.1volt and ©the junction is reverse-biased at 0.1volt?

A potential barrier of 0.2 V exists across an unbiased p-n junction (i) Calculate the width of the depletion region if an electric field of 10^(6) Vm^(-1) exists in it (ii) With what minimum kinetic energy a hole should diffuse from the p side to the n side if the junction is (a) unbiased (b) forward biased at 0.1 V (c ) reverse biased at 0.1 V

The p-n junction is a :-

The drift current in a p-n junction is

The n-side of the depletion layer of a p-n junction :

1.The diffusion current in a p- n junction is 1) from the n- side to the p -side 2) from the p -side to the n -side 3) from the n- side to the p - side if the function is forward-biased and in the opposite direction if it is reverse- biased 4) from the p - side to the n -side if the junction is forward - biased and in the opposite direction if it is reverse - biased.

The P-N junction is-

p-n junction diode acts as

CP SINGH-SEMICONDUCTORS-Exercises
  1. In the energy band diagram of a material shown below, the open circles...

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  2. The dominant mechanisms for motion of charge carriers in forward and r...

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  3. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  4. In a p-n junction (i) new holes and conduction electrons are produce...

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  5. In the case of forward biasing of PN-junction, which one of the follow...

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  6. To make a PN junction conducting

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  7. A potential barrier of 0.50 V exists across a P-N junction. If the de...

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  8. The reverse biasing in a PN junction diode

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  9. The cause of the potential barrier in a PN diode is

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  10. The potential barrier, in the depletion layer, is due to

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  11. Barrier potential of a p-n junction diode does not depend on

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  12. The depletion layer in P-N junction region is caused by

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  13. In a p- n junction diode not connected to any circuit,

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  14. If the two ends of a p-n junction are joined by a wire ,

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  15. A semiconducting device is connected in a series circuit with a batter...

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  16. The PN junction diode is used as

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  17. Two PN-junction can be connected in series by three different methods ...

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  18. In a p-n junction photo cell, the value of the of the photo electromo...

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  19. On increases the reverse biase to a large value of in a PN- junction d...

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  20. In P-N junction, avalanche current flows in circuit when biassing is

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