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A potential barrier of 0.50 V exists acr...

A potential barrier of `0.50 V` exists across a `P-N` junction. If the depletion region is `5.0xx10^(-7)m`, wide the intensity of the electric field in this region is

A

`1.0xx10^(6)V//m`

B

`1.0xx10^(5)V//m`

C

`2.0xx10^(5)V//m`

D

`2.0xx10^(6)V//m`

Text Solution

Verified by Experts

The correct Answer is:
A
`E=(V)/(d)=(0.5)/(5xx10^(-7))=10^(6)V//m`
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CP SINGH-SEMICONDUCTORS-Exercises
  1. In the case of forward biasing of PN-junction, which one of the follow...

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  2. To make a PN junction conducting

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  3. A potential barrier of 0.50 V exists across a P-N junction. If the de...

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  4. The reverse biasing in a PN junction diode

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  5. The cause of the potential barrier in a PN diode is

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  6. The potential barrier, in the depletion layer, is due to

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  7. Barrier potential of a p-n junction diode does not depend on

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  8. The depletion layer in P-N junction region is caused by

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  9. In a p- n junction diode not connected to any circuit,

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  10. If the two ends of a p-n junction are joined by a wire ,

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  11. A semiconducting device is connected in a series circuit with a batter...

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  12. The PN junction diode is used as

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  13. Two PN-junction can be connected in series by three different methods ...

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  14. In a p-n junction photo cell, the value of the of the photo electromo...

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  15. On increases the reverse biase to a large value of in a PN- junction d...

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  16. In P-N junction, avalanche current flows in circuit when biassing is

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  17. Avalanche breakdown in a PN junction diode is to

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  18. In the given figure, which of the diodes are forward biased?

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  19. What is the current in the circuit shown below?

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  20. The diode used in the circuit shown in the figure has a constant volta...

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