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The cause of the potential barrier in a ...

The cause of the potential barrier in a `P_N` diode is

A

depletion of positive charge near the the junction

B

concentration of positive charges near the junction

C

depletion of negarive charges near the junction

D

concentration of positive and negative charges near the junction

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The correct Answer is:
D
NA
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CP SINGH-SEMICONDUCTORS-Exercises
  1. A potential barrier of 0.50 V exists across a P-N junction. If the de...

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  2. The reverse biasing in a PN junction diode

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  3. The cause of the potential barrier in a PN diode is

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  4. The potential barrier, in the depletion layer, is due to

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  5. Barrier potential of a p-n junction diode does not depend on

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  6. The depletion layer in P-N junction region is caused by

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  7. In a p- n junction diode not connected to any circuit,

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  8. If the two ends of a p-n junction are joined by a wire ,

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  9. A semiconducting device is connected in a series circuit with a batter...

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  10. The PN junction diode is used as

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  11. Two PN-junction can be connected in series by three different methods ...

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  12. In a p-n junction photo cell, the value of the of the photo electromo...

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  13. On increases the reverse biase to a large value of in a PN- junction d...

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  14. In P-N junction, avalanche current flows in circuit when biassing is

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  15. Avalanche breakdown in a PN junction diode is to

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  16. In the given figure, which of the diodes are forward biased?

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  17. What is the current in the circuit shown below?

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  18. The diode used in the circuit shown in the figure has a constant volta...

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  19. Current in the circuit will be

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  20. Find V(AB)

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