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Barrier potential of a p-n junction diod...

Barrier potential of a `p-n` junction diode does not depend on

A

tempreture

B

forward bias

C

doping density

D

diode design

Text Solution

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The correct Answer is:
D

NA
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CP SINGH-SEMICONDUCTORS-Exercises
  1. The cause of the potential barrier in a PN diode is

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  2. The potential barrier, in the depletion layer, is due to

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  3. Barrier potential of a p-n junction diode does not depend on

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  4. The depletion layer in P-N junction region is caused by

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  5. In a p- n junction diode not connected to any circuit,

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  6. If the two ends of a p-n junction are joined by a wire ,

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  7. A semiconducting device is connected in a series circuit with a batter...

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  8. The PN junction diode is used as

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  9. Two PN-junction can be connected in series by three different methods ...

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  10. In a p-n junction photo cell, the value of the of the photo electromo...

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  11. On increases the reverse biase to a large value of in a PN- junction d...

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  12. In P-N junction, avalanche current flows in circuit when biassing is

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  13. Avalanche breakdown in a PN junction diode is to

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  14. In the given figure, which of the diodes are forward biased?

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  15. What is the current in the circuit shown below?

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  16. The diode used in the circuit shown in the figure has a constant volta...

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  17. Current in the circuit will be

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  18. Find V(AB)

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  19. In the given circuit The current through the battery is

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  20. In a reverse biased diode, when the applied voltage changes by 1V, the...

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