Home
Class 12
PHYSICS
A light emitting diode (LED) has a volta...

A light emitting diode `(LED)` has a voltage drop of `2V` across it and passes a current of `10 mA`. When it operates with a `6V` battery through a limiting resistor `R`. The value of `R` is

A

`40kOmega`

B

`4kOmega`

C

`200Omega`

D

`400Omega`

Text Solution

Verified by Experts

The correct Answer is:
D
`R=(6-2)/(10xx10^(-3))=400Omega`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    CP SINGH|Exercise Exercises|140 Videos

  • REFRACTION OF LIGHT BY PLANE SURFACES

    CP SINGH|Exercise Exercises|110 Videos

  • THERMAL AND ELECTRIC EFFECT oF CURRENT

    CP SINGH|Exercise Exercises|101 Videos

Similar Questions

Explore conceptually related problems

A light-emitting diode (LED) has a voltage drop of 2V across it and passes a current of 10 muA , when it operates with a 6V battery with a limiting resistor R. what is the value of R ?

A light emitting diode has a voltage drop of 2 v across it and passes a current of 10muA . When it operates with a 6 v battery through a limiting resistor R, the value of R is

A P-N junction diode can withstand currents up to 10 mA . Under forward bias, The diode has a potential drop of 0.5 V across it which is assumed to be independent of current. The maximum voltage of the battery used to forward bias the diode when a resistance of 200 Omega is connected in series with it is

An n-p-n transistor in a common - emitter mode is used as a simple voltage amplifier with a collector current of 4 mA. The positive terminal of a 8 V battery is connected to the collector through a load resistance R_L and to the base through a resistance R_B . The collector - emitter voltage V_(CE) = 4 V , the base - emitter voltage V_(BE) = 0.6 V and the current amplification factor beta = 100 . Calculate the values of R_L and R_B .

A diode made of silicon has a barrier potential of 0.7 V and a current of 20 mA passes through the diode when a battery of emf 3 V and a resistor is connected to it. The wattage of the resistor and diode are

CP SINGH-SEMICONDUCTORS-Exercises
  1. Which one of the following statement is not correct in the case of lig...

    Text Solution

    |

  2. A p-n photodiode is fabricate from a semiconductor with a band gap of ...

    Text Solution

    |

  3. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

    Text Solution

    |

  4. GaAs (with a band gap =1.5eV) as an LED can emit

    Text Solution

    |

  5. Zener breakdown in a semi-conductor diode occurs when

    Text Solution

    |

  6. Zener breakdown takes place if

    Text Solution

    |

  7. Zener diode is used as

    Text Solution

    |

  8. A zener diode, having breakdown voltage equal to 15 V is used in a vol...

    Text Solution

    |

  9. If the voltage between the terminals A and B is 17V and zener breakdow...

    Text Solution

    |

  10. Least doped region in a transistor

    Text Solution

    |

  11. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  12. If l(1),l(2),l(3) are the lengths of the emitter, base and collector o...

    Text Solution

    |

  13. The symbol given in figure represents

    Text Solution

    |

  14. In a transistor base is made thin and doped with little impurity atoms...

    Text Solution

    |

  15. In a normal operation of a transistor, (i) base-emitter junction is ...

    Text Solution

    |

  16. Let I(E),I(C) and I(B) represent the emitter current, the collector cu...

    Text Solution

    |

  17. In NPN transistor the collector current is 10mA. If 90% of electrons e...

    Text Solution

    |

  18. In the study of transistors as an amplifier, if alpha=I(c)//I(c) and b...

    Text Solution

    |

  19. In a transistor, a change of 8.0mA in the emitter current produced a c...

    Text Solution

    |

  20. The current gain of a transistor in a common base arrangement in 0.9...

    Text Solution

    |