The band gap in Germanium and silicon in eV respectively is

the band gap in germanium and silicon in eV are

The forbidden gap within germanium and silicon are 0.7 eV and 1.1 eV respectively. It implies that

Germanium and silicon are the examples of ________

The germanium and silicon semiconductor devices can be respectively safely operated upto the temperatures :

A silicon and a germanium diode has identical physical dimensions. The band gap in silicon is larger than that in germanium. An identical reverse hlas is applied across the diodes.

The energy gap is much more in silicon than in germanium because

The band gap for silicon is 1.1eV.(a)Find the ratio of the band gap to kT for silicon at room temperaature 300K.(b)At what tempareture does this ratio become one tenth of the value at 300K?(Silicon will not retain its structure at these high temperatures.)

The band gap for silicon is 1.1eV.(a)Find the ratio of the band gap to kT for silicon at room temperaature 300K.(b)At what tempareture does this ratio become one tenth of the value at 300K?(Silicon will not retain its structure at these high temperatures.)