The width of depletion region in p-n junction diode is `500 nm` and an intrinsic electric field of `6xx 10^(5) Vm^(-1)` is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?

The width of the depletion region in a p-n junction diode is 400 nm and an intense electric field of 8 xx 10^5 V/m exists in it. What is the kinetic energy which a conduction electron must have in order to diffuse from then region to p region?

The width of depletion region in PN–junction diode is 500 nm and an internal electric field is 6 x 10^5 V/m . What is the kinetic energy which a conduction electron must have in order to diffuse from the N side to P side :-

The width of depletion region in a P-N junction diode is 500 nm and an intense electric field of 5xx10^(5)Vm^(-1) is also found to exit init. Determine the height of the potential barrier. Also calculate the kinetic energy which a conduction electron must have inorder to diffuse from the n-side to p-side.

In a p-n junction, the depletion region is 400nm wide and and electric field of 5xx10^5Vm_(-1) exists in it (a)Find the geight of the potential barrier, (b)What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?

In a p-n junction, the depletion region is 400nm wide and and electric field of 5xx10^5Vm_(-1) exists in it (a)Find the height of the potential barrier, (b)What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?