A `Si` and a `Ge` diode has identical physical dimensions. The band gap in `Si` is larger than that in `Ge`. An indentical reverse bias is applied across the diodes.

A silicon and a germanium diode has identical physical dimensions. The band gap in silicon is larger than that in germanium. An identical reverse hlas is applied across the diodes.

Reverse bias applied to a junction diode

Reverse bias applied to a junction diode

Reverse bias applied to a junction diode