In a semiconductor the concentrations of electrons and holes are `8xx10^(18)//m^(3)` and `5xx10^(18)//m^(3)` respectively. If the mobilities of electrons and hole are `2.3m^(2)/"volt-sec"` and `0.01m^(2)//"volt-sec"` respectively, then semiconductor is-

In semiconductor the concentrations of electron and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m respectively. If the mobilities of electrons and hole are 2.3 m^(2)// volt-sec and 0.01m^(2)// volt-sec respectively, then semicondutor is

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-

In a semiconductor, the concentration of electrons is 8xx10^13cm and that of holes is 5xx10^12cm^-3 . Is it p-type or n-type semiconductor?

The number densities of electrons and holes in an extrinsic semiconductor are 8 xx 10^13 cm^-3 and 5 xx 10^12cm^-3 respectively and their respective mobilities are : 23 xx 10^3cm^2//Vs and 10^2cm^2//Vs . The conductivity of the semiconductor is