Pure Si at 300K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` Doping by indium increases `n_(h)` to `3xx10^(22)m`. Calculate `n_(e_(2))` in the doped Si.

Explanation

To solve the problem, we will use the principle of mass action in semiconductors, which states that the product of the electron concentration (\(n_e\)) and hole concentration (\(n_h\)) is equal to the square of the intrinsic carrier concentration (\(n_i\)) at thermal equilibrium.

### Step-by-Step Solution:

1. **Identify Given Values:**
- The intrinsic carrier concentration of pure silicon at 300K is given as:
\[
n_i = 1.5 \times 10^{16} \, \text{m}^{-3}
...