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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrastions of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(theta)` in the doped Si-

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`n_(e)n_(h)=n_(i)^(2)`
`n_(h)=4.5xx10^(22)m^(-3)`
so, `n_(e)=5.0xx10^(9)m^(-3)`
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RESONANCE-SEMICONDUCTORS-Exercise 3
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  2. When p-n junction diode is forward biased then

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  3. When npn transistor is used as an amplifler

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  7. If the ratio of the concentration of electron to that of holes in a se...

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  8. In a common base mode of a transition , the collector current is 5.48...

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  9. If the lattice constant of this semiconductor is decreased, then which...

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  10. The circuit has two oppositively connected ideal diodes in parallel wh...

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  11. If a p-n junction diode, a square input signal of 10 V is applied as s...

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  12. Carbon , silicon and germanium have four valence electrons each . At r...

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  13. A working transitor with its three legs marked P, Q and R is tested us...

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  14. In the circuit below, A and B represents two inputs and C represents t...

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  15. The Fig shown input waveforms A and B to a logic gate. Draw the output...

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  16. a p -n juction (D) shown in the figure can act an a rectifier An alter...

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  17. The output of an OR gate is connected to both the inputs of a NAND gat...

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  18. Truth table for system of four NAND gates as shown in figure is : .

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  19. The 1- V characteristic of on LED is

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  20. The forward biased diode connection is

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  21. Two identical p-n junctions may be connected in series in which a batt...

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