Home
Class 12
PHYSICS
Two junction diodes, one of germanium (...

Two junction diodes, one of germanium `(Ge)` and other of silicon `(Si)` are connected as shown in fig to a battery of `12 V` and a load resistance `10 kOmega`. The germanium diode conducts at `0.3 V` and silicon diode at `0.7 V`. When current flows in the circuit, the potential of terminal `Y` will be
.

A

12 V

B

11 V

C

11.3 V

D

11.7 V

Text Solution

Verified by Experts

The correct Answer is:
D
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    RESONANCE|Exercise Exercise|100 Videos
  • SEMICONDUCTORS

    RESONANCE|Exercise Exercise 2|16 Videos
  • REVISION DPP

    RESONANCE|Exercise All Questions|444 Videos
  • SIMPLE HARMONIC MOTION

    RESONANCE|Exercise Advanced Level Problems|13 Videos

Similar Questions

Explore conceptually related problems

A p-n junction diode in forward bias is connected to a battery of 4 V and a resistance of 80 omega as shown in the ajoining determine the maximum current in the circuit barrier potential of p-n diode is 0.2 V

A P-N junction diode connected to a battery of e.m.f. 4.5 V and an external resistance of 1000 Omega . What is the value of current in the circuit, if potential barrier in the diode = 0.5 V

A battery of emf 10 V and internal resistance 3Omega is connected to a resistor. The current in the circuit is 0.5 A . The terminal voltage of the battery when the circuit is closed is

In the given figure, a diode D is connected to an external resistance R=100 Omega and an emf of 3.5 V . If the barrier potential developed across the diode is 0.5 V , the current in the circuit will be :

A p n junction diode is connected to a battery of 2 v and a resistance of 8 ohm as shown in figure calculate the current passing through the resistor

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V_(0) changes by

RESONANCE-SEMICONDUCTORS-Exercise 3
  1. Two junction diodes, one of germanium (Ge) and other of silicon (Si) ...

    Text Solution

    |

  2. When p-n junction diode is forward biased then

    Text Solution

    |

  3. When npn transistor is used as an amplifler

    Text Solution

    |

  4. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  5. In a common base ampifier , the phase difference between the input sig...

    Text Solution

    |

  6. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

    Text Solution

    |

  7. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  8. In a common base mode of a transition , the collector current is 5.48...

    Text Solution

    |

  9. If the lattice constant of this semiconductor is decreased, then which...

    Text Solution

    |

  10. The circuit has two oppositively connected ideal diodes in parallel wh...

    Text Solution

    |

  11. If a p-n junction diode, a square input signal of 10 V is applied as s...

    Text Solution

    |

  12. Carbon , silicon and germanium have four valence electrons each . At r...

    Text Solution

    |

  13. A working transitor with its three legs marked P, Q and R is tested us...

    Text Solution

    |

  14. In the circuit below, A and B represents two inputs and C represents t...

    Text Solution

    |

  15. The Fig shown input waveforms A and B to a logic gate. Draw the output...

    Text Solution

    |

  16. a p -n juction (D) shown in the figure can act an a rectifier An alter...

    Text Solution

    |

  17. The output of an OR gate is connected to both the inputs of a NAND gat...

    Text Solution

    |

  18. Truth table for system of four NAND gates as shown in figure is : .

    Text Solution

    |

  19. The 1- V characteristic of on LED is

    Text Solution

    |

  20. The forward biased diode connection is

    Text Solution

    |

  21. Two identical p-n junctions may be connected in series in which a batt...

    Text Solution

    |