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The free electron concentration (n) in t...

The free electron concentration (n) in the conduction band of a semiconductor at a temperature T kelvin is described in terms of `E_(g)` and T as-

A

`n=Ate^(-Eg//kT)`

B

`n=AT^(2)e^(-Eg//kT)`

C

`n=AT^(2)e^(-Eg//kT)`

D

`n=AT^(2)e^(-Eg//2kT)`

Text Solution

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The correct Answer is:
D
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RESONANCE-SEMICONDUCTORS-Exercise
  1. Which of the following statements is true-

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  2. The valence band at 0 K is-

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  3. The free electron concentration (n) in the conduction band of a semico...

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  4. Electric conduction in a semiconductor takes place due to

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  5. An electric field us applied to a semiconductor.Let the number of char...

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  6. The mobility of free electrons is greater then that of free holes beca...

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  7. Let n(p) and n(e), be the numbers of holes and condution electrons in ...

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  8. The electrical conductivity of pure germanium can be increased by

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  9. n-type semiconductor is

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  10. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  11. A semiconductor is doped with a donor impurity

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  12. A P-type semiconductor has acceptor levels 57 meV above the valence ba...

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  13. Which of the following energy band diagrams shows the N-type semicondu...

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  14. A P-type sillicon semiconductor is made by adding one atom of indium p...

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  15. When N-type of semiconductor is heated

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  16. GaAs is-

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  17. What will be conductance of pure sillicon crystal at 300 K temp? if el...

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  18. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  19. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  20. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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