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A P-type sillicon semiconductor is made ...

A P-type sillicon semiconductor is made by adding one atom of indium per `5xx10^(7)` atoms of sillicon is `25xx10^(28) "atom"//m^(3)`. Point the number of acceptor atoms in per cubic cm. of sillicon

A

`2xx10^(30) "atom"//cm^(3)`

B

`5xx10^(15) "atom"//cm^(3)`

C

`1xx10^(15) "atom"//cm^(3)`

D

`2.5xx10^(36) "atom"//cm^(3)`

Text Solution

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The correct Answer is:
B
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RESONANCE-SEMICONDUCTORS-Exercise
  1. A P-type semiconductor has acceptor levels 57 meV above the valence ba...

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  2. Which of the following energy band diagrams shows the N-type semicondu...

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  3. A P-type sillicon semiconductor is made by adding one atom of indium p...

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  4. When N-type of semiconductor is heated

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  5. GaAs is-

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  6. What will be conductance of pure sillicon crystal at 300 K temp? if el...

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  7. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  8. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  9. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  10. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  11. The length of a germanium rod is 0.58 cm and its area of cross-section...

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  12. The contribution in the total current flowing through a semiconductor ...

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  13. The P-N junction is-

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  14. Diffusion current in a p-n junction is greater than the drift current ...

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  15. In a p-n junction

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  16. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  17. The depletion region of a P-N diode, under open circuit condition cont...

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  18. Which is the wrong statement in following sentence? A device in which ...

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  19. The depletion layer in P-N junction region is caused by

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  20. The contact potential at the junction site in a P-N junction is-

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