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What will be conductance of pure sillico...

What will be conductance of pure sillicon crystal at 300 K temp? if electron hole pairs per `cm^(3)` is `1.072xx10^(10)` at this temp. `mu_(n)=1350 cm^(2)//"volt"` sec and `mu_(p)=480 cm^(2)//"volt"` sec-

A

`3.14xx10^(-6) "mho/cm"`

B

`3xx10^(6) "mho/cm"`

C

`10^(-6) "mho/cm"`

D

`10^(6) "mho/cm"`

Text Solution

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The correct Answer is:
A
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RESONANCE-SEMICONDUCTORS-Exercise
  1. When N-type of semiconductor is heated

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  2. GaAs is-

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  3. What will be conductance of pure sillicon crystal at 300 K temp? if el...

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  4. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  5. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  6. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  7. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  8. The length of a germanium rod is 0.58 cm and its area of cross-section...

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  9. The contribution in the total current flowing through a semiconductor ...

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  10. The P-N junction is-

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  11. Diffusion current in a p-n junction is greater than the drift current ...

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  12. In a p-n junction

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  13. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  14. The depletion region of a P-N diode, under open circuit condition cont...

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  15. Which is the wrong statement in following sentence? A device in which ...

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  16. The depletion layer in P-N junction region is caused by

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  17. The contact potential at the junction site in a P-N junction is-

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  18. When value of current increase in P-N junction, then the value of cont...

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  19. What accounts for the flow of charge carriers in forward and reverse b...

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  20. The barrier potential in a P-N junction is maximum in

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