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Diffusion current in a p-n junction is g...

Diffusion current in a p-n junction is greater than the drift current in magnitude

A

if the junction is forward-biased

B

if the junction is reverse-biased

C

if the junction is unbiased

D

in no case

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The correct Answer is:
A
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RESONANCE-SEMICONDUCTORS-Exercise
  1. The contribution in the total current flowing through a semiconductor ...

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  2. The P-N junction is-

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  3. Diffusion current in a p-n junction is greater than the drift current ...

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  4. In a p-n junction

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  5. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  6. The depletion region of a P-N diode, under open circuit condition cont...

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  7. Which is the wrong statement in following sentence? A device in which ...

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  8. The depletion layer in P-N junction region is caused by

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  9. The contact potential at the junction site in a P-N junction is-

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  10. When value of current increase in P-N junction, then the value of cont...

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  11. What accounts for the flow of charge carriers in forward and reverse b...

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  12. The barrier potential in a P-N junction is maximum in

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  13. The diffusion current in a p-n junction is

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  14. The drift current in a p-n junction is

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  15. For a reverse bias P-N junction-

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  16. Druing P-N junction formation when the electron and holes stops moving...

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  17. The value of barrier potential of P-N juntion in Ge is-

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  18. Region which have no free electron and holes in P-N junction is

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  19. A device whose one end is connected to -ve terminal and other end conn...

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  20. In a p-n junction diode, the barrier potential opposes diffusion of

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