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A hole diffuses from the p-side to the n...

A hole diffuses from the p-side to the n-side in a p-n junction.This means that

A

a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band

B

a conduction electron on the p-side jumps to a broken bond to complete it

C

a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side complete it.

D

a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.

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Verified by Experts

The correct Answer is:
C
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When a p-type impurity is doped in a semiconductor,a large number of holes are created. This does not make the semiconductor chared.But when holes diffuse from the p-side to the n-side in a p-n junction,the n-side gets positvely charged.Explain.

The potential barrier exists across the junction is 0.2volt.What minimm kinetic energy a hole should have to diffuse from the p-side to the n-side if (a)the junction is unbiased,(b)the junction is forward-biased at 0.1volt and ©the junction is reverse-biased at 0.1volt?

A potential barrier of 0.2 V exists across an unbiased p-n junction (i) Calculate the width of the depletion region if an electric field of 10^(6) Vm^(-1) exists in it (ii) With what minimum kinetic energy a hole should diffuse from the p side to the n side if the junction is (a) unbiased (b) forward biased at 0.1 V (c ) reverse biased at 0.1 V

The p-n junction is a :-

The drift current in a p-n junction is

The n-side of the depletion layer of a p-n junction :

1.The diffusion current in a p- n junction is 1) from the n- side to the p -side 2) from the p -side to the n -side 3) from the n- side to the p - side if the function is forward-biased and in the opposite direction if it is reverse- biased 4) from the p - side to the n -side if the junction is forward - biased and in the opposite direction if it is reverse - biased.

The P-N junction is-

p-n junction diode acts as

RESONANCE-SEMICONDUCTORS-Exercise
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In a p-n junction

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  3. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  4. The depletion region of a P-N diode, under open circuit condition cont...

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  5. Which is the wrong statement in following sentence? A device in which ...

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  6. The depletion layer in P-N junction region is caused by

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  7. The contact potential at the junction site in a P-N junction is-

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  8. When value of current increase in P-N junction, then the value of cont...

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  9. What accounts for the flow of charge carriers in forward and reverse b...

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  10. The barrier potential in a P-N junction is maximum in

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  11. The diffusion current in a p-n junction is

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  12. The drift current in a p-n junction is

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  13. For a reverse bias P-N junction-

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  14. Druing P-N junction formation when the electron and holes stops moving...

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  15. The value of barrier potential of P-N juntion in Ge is-

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  16. Region which have no free electron and holes in P-N junction is

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  17. A device whose one end is connected to -ve terminal and other end conn...

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  18. In a p-n junction diode, the barrier potential opposes diffusion of

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  19. PN-junction diode works as a insulator, if connected

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  20. If the forward voltage in a diode is increased, the width of the deple...

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