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Druing P-N junction formation when the e...

Druing P-N junction formation when the electron and holes stops moving from P to N and N to P, then

A

there is increase in number of `+ve` and `-ve` ions at junction

B

there is increase in number of electrons at junction.

C

there is increase in number of holes at junction

D

there is increase in number of holes and electrons at junctions

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The correct Answer is:
A
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RESONANCE-SEMICONDUCTORS-Exercise
  1. The drift current in a p-n junction is

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  2. For a reverse bias P-N junction-

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  3. Druing P-N junction formation when the electron and holes stops moving...

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  4. The value of barrier potential of P-N juntion in Ge is-

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  5. Region which have no free electron and holes in P-N junction is

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  6. A device whose one end is connected to -ve terminal and other end conn...

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  7. In a p-n junction diode, the barrier potential opposes diffusion of

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  8. PN-junction diode works as a insulator, if connected

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  9. If the forward voltage in a diode is increased, the width of the deple...

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  10. The resistance of a reverse baised P-N junction diode is about-

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  11. In which case is the junction diode is not reverse bias-

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  12. If V(A) and V(B) denote the potentials of A and B, then the equivalent...

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  13. Avalanche breakdown is due to

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  14. If the two ends of a p-n junction are joined by a wire ,

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  15. Symbolic representation of photodiode is

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  16. Symbol of zener diode-

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  17. Consider the following statements A and B and identify the correct ans...

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  18. Two junction diodes, one of germanium (Ge) and other of silicon (Si) ...

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  19. When light falls on a photo diode, its conductivity increases. Experim...

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  20. If the forward voltage in a semiconductor diode is chaged form 0.5 V t...

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