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Barrier potential of a p-n junction diod...

Barrier potential of a `p-n` junction diode does not depend on

A

diode design

B

temperature

C

forward bias

D

doping density

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The correct Answer is:
A
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RESONANCE-SEMICONDUCTORS-Exercise 3
  1. For a transistor (I(C))/(I(E))=0.96, then current gain for common emit...

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  2. For the given circuit of PN-junction diode, which of the following sta...

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  3. Barrier potential of a p-n junction diode does not depend on

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  4. Of the diodes shown in the following diagrams, which one is reverse bi...

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  5. In semiconductor at a room temperature

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  6. The output of OR gate is 1

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  7. Zener diode is used as

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  8. Carbon , silicon and germanium have four valence elcectrons each . The...

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  9. Application of a forward biase to a p-n junction:

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  10. A transistor -oscillator using a resonant circuit with an inductor L (...

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  11. A transistor is operated in common emitter configuration at constant c...

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  12. A forward biased diode is

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  13. A photocell employs photoelectric effect to convert

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  14. The radius of germanium (Ge) nuclide is measured to be twice the radiu...

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  15. Semiconductor Ge has forbidden gap of 1.43 eV. Calculate maximum wavel...

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  16. In the following circuit, the output Y for all possible inputs A and B...

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  17. In the energy band diagram of a material shown below, the open circles...

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  18. A common emiiter amplifier has voltage gain 50 and current gain is 25....

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  19. Draw the truth table for the logic gate arrangement shown in the figur...

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  20. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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