Home
Class 12
PHYSICS
A transistor is operated in common emitt...

A transistor is operated in common emitter configuration at constant collector voltage `V_(c)=1.5 V` such that a change in the base current from `100 muA` to `150 muA` produces a change in the collector current from `5 mA` to `10 mA`. The current gain `(beta)` is

A

67

B

85

C

100

D

50

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    RESONANCE|Exercise Exercise 2|16 Videos

  • REVISION DPP

    RESONANCE|Exercise All Questions|444 Videos

  • SIMPLE HARMONIC MOTION

    RESONANCE|Exercise Advanced Level Problems|13 Videos

Similar Questions

Explore conceptually related problems

A transistor is operated in common emitter configuration at V_(c)=2 V such that a change in the base current from 100 muA to 200 muA produces a change in the collector current from 5 mA to 10 mA . The current gain is

A transistor is operated in common emitter configuration at V_(c)=2 V such that a change in the base current from 100 muA to 300 muA produces a change in the collector current from 10 mA to 20 mA . The current gain is

A transistor is operated in common emitter configuration at V_C=2 V . Such that a change in the base current from 100 muA to 200 muA produces a change in the collector current of 5mA to 10 mA. The current gain is

A transistor is operated in common emitter configuration at V_(C)=2V such that a change in the base current from 100muA to 300muA produces a change in the collector current from 10 mA to 20 mA. The current gain is

A transistor is operetaed in common-emitter configuration at V_(c)=2V such that a change in the base current from 100mA to 200mA produces a change in the collector current from 5mA to 10mA . The current gain is

A transsitor is operated in CE configuration at V_(CC) = 2 V such that a change in base current from 100 muA to 200 muA produces a change in the collector current from 9mA to 16.5 mA. The value of current gain, beta is -

RESONANCE-SEMICONDUCTORS-Exercise 3
  1. Application of a forward biase to a p-n junction:

    Text Solution

    |

  2. A transistor -oscillator using a resonant circuit with an inductor L (...

    Text Solution

    |

  3. A transistor is operated in common emitter configuration at constant c...

    Text Solution

    |

  4. A forward biased diode is

    Text Solution

    |

  5. A photocell employs photoelectric effect to convert

    Text Solution

    |

  6. The radius of germanium (Ge) nuclide is measured to be twice the radiu...

    Text Solution

    |

  7. Semiconductor Ge has forbidden gap of 1.43 eV. Calculate maximum wavel...

    Text Solution

    |

  8. In the following circuit, the output Y for all possible inputs A and B...

    Text Solution

    |

  9. In the energy band diagram of a material shown below, the open circles...

    Text Solution

    |

  10. A common emiiter amplifier has voltage gain 50 and current gain is 25....

    Text Solution

    |

  11. Draw the truth table for the logic gate arrangement shown in the figur...

    Text Solution

    |

  12. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  13. The circuit is equivalent to

    Text Solution

    |

  14. (a) For given transistor circuit, the base current is 10muA and the co...

    Text Solution

    |

  15. A p-n photodiode is fabricated from a semiconductor with a band gap of...

    Text Solution

    |

  16. The symbolic representation of four logic gates are given in Fig.The l...

    Text Solution

    |

  17. (a) Draw the circuit diagram of reversed bias p-n junction. (b). Dra...

    Text Solution

    |

  18. Which one of the following statement is false?

    Text Solution

    |

  19. The device that can act as a complete electronic circuit is

    Text Solution

    |

  20. A common emitter amplifier has a voltage gain of 50, an input impedenc...

    Text Solution

    |