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A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

A

6000 Å

B

4000 nm

C

6000 nm

D

4960 Å

Text Solution

Verified by Experts

The correct Answer is:
D

Only signal having wavelength less than threshold wavelength will be detercted.
Energy `E=hv=h(c)/(lamda)implieslamda=(hc)/(E)`
Substituting the value of h, c and E in the above equation
`lamda=(6.6xx10^(-34)xx3xx10^(8))/(2.5xx1.6xx10^(-19))=5000Å`
As `4000Ålt5000Å`
Signal of wavelength `4000Å` can be detected by the photodiode
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RESONANCE-SEMICONDUCTORS-Exercise 3
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  2. (a) For given transistor circuit, the base current is 10muA and the co...

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  6. Which one of the following statement is false?

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  8. A common emitter amplifier has a voltage gain of 50, an input impedenc...

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  10. In the following figure, the diodes, which are forward biased, are

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  11. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

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  12. A zener diode, having breakdown voltage equal to 15 V is used in a vol...

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  13. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  14. In forward biasing of the p-n junction:

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  15. If a small amount of pentavalent atoms is added to germanium crystal:

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  16. Value of forbidden energy gap for semi conductor is:

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  17. Ga As is a/an:

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  18. The number of free electrons is Si at normal temperature is

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  19. Regarding a semiconductor which one of the following statements is wro...

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  20. For making p-n junction diode forward biased:

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