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In forward biasing of the p-n junction:...

In forward biasing of the p-n junction:

A

The positive terminal of he battery is connected to p-side and the depletion region becomes thick.

B

The positive terminal of the battery is connected to n-side and the depletion region becomes thin.

C

The positive terminal of the battery is connected to n-side and the depletion region becomes thick.

D

The positive terminal of the battery is connected to p-side and the depletion region becomes thin.

Text Solution

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The correct Answer is:
D
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RESONANCE-SEMICONDUCTORS-Exercise 3
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  2. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  3. In forward biasing of the p-n junction:

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  4. If a small amount of pentavalent atoms is added to germanium crystal:

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  5. Value of forbidden energy gap for semi conductor is:

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  6. Ga As is a/an:

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  7. The number of free electrons is Si at normal temperature is

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  8. Regarding a semiconductor which one of the following statements is wro...

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  9. For making p-n junction diode forward biased:

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  10. In a good conductor of electricity the type of bonding that exists is ...

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  11. Which of the following statements is true for an n-type semi-comductor...

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  12. A light emitting diode has a voltage drop of 2 v across it and passes ...

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  13. The minimum potential difference between the base and emitter required...

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  14. A p-n junction diode is reverse biased. Then

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  15. The difference in the variation of resistance with temperature in a me...

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  16. If the input is given between A and C, thent he output at the ends of ...

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  17. The majority charge carriers in P-type semiconductors are

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  18. Wires P and Q have the same resistance at ordinary (room) temperature....

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  19. Two ideal diodes are connected to a battery as shown in the circuit. T...

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