Home
Class 12
PHYSICS
Value of forbidden energy gap for semi c...

Value of forbidden energy gap for semi conductor is:

A

1 eV

B

6 eV

C

0 eV

D

3 eV

Text Solution

Verified by Experts

The correct Answer is:
A
Value of forbidden energy gap in semiconductor is 1 eV.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    RESONANCE|Exercise Exercise 2|16 Videos

  • REVISION DPP

    RESONANCE|Exercise All Questions|444 Videos

  • SIMPLE HARMONIC MOTION

    RESONANCE|Exercise Advanced Level Problems|13 Videos

Similar Questions

Explore conceptually related problems

Forbidden energy gap in a semiconductor is

Forbidden energy gap for an insulator is :–

The forbidden energy gap in a semiconductor is of the order of

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 1240 nm is incident on it. The forbidden band energy for the semi conductor is (in eV).

Which is the correct relation for forbidden energy gap in conductor, semi conductor and insulator

How does the forbidden energy gap of an intrinsic semiconductor vary with the increase in temperature

Statement 1: Conductivity of semiconductor increases with increase in temperature. Statement 2: Forbidden energy gap is highest for semiconductors.

The forbidden energy gap in an intrinsic semiconductor is

The forbidden energy gap of a germanium semiconductor is 0.75 eV. The minimum thermal energy of electrons reaching the conduction band from the valence band should be -

RESONANCE-SEMICONDUCTORS-Exercise 3
  1. In forward biasing of the p-n junction:

    Text Solution

    |

  2. If a small amount of pentavalent atoms is added to germanium crystal:

    Text Solution

    |

  3. Value of forbidden energy gap for semi conductor is:

    Text Solution

    |

  4. Ga As is a/an:

    Text Solution

    |

  5. The number of free electrons is Si at normal temperature is

    Text Solution

    |

  6. Regarding a semiconductor which one of the following statements is wro...

    Text Solution

    |

  7. For making p-n junction diode forward biased:

    Text Solution

    |

  8. In a good conductor of electricity the type of bonding that exists is ...

    Text Solution

    |

  9. Which of the following statements is true for an n-type semi-comductor...

    Text Solution

    |

  10. A light emitting diode has a voltage drop of 2 v across it and passes ...

    Text Solution

    |

  11. The minimum potential difference between the base and emitter required...

    Text Solution

    |

  12. A p-n junction diode is reverse biased. Then

    Text Solution

    |

  13. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  14. If the input is given between A and C, thent he output at the ends of ...

    Text Solution

    |

  15. The majority charge carriers in P-type semiconductors are

    Text Solution

    |

  16. Wires P and Q have the same resistance at ordinary (room) temperature....

    Text Solution

    |

  17. Two ideal diodes are connected to a battery as shown in the circuit. T...

    Text Solution

    |

  18. In a CE transistor amplifier, the audio signal voltage across the coll...

    Text Solution

    |

  19. C and Si both have same lattice structure, having 4 bonding electrons ...

    Text Solution

    |

  20. Transfer characterstics [output voltage (V(o)) vs. input voltage (V(i)...

    Text Solution

    |