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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

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At thermal equilibrium `n_(e)n_(h)=n_(1)^(2)=n_(1)^(2) rArr n_(e)=(n_(i)^(2))/(n_(e))=((1.5 xx10^(16)))/(4.5 xx 10^(22))=5 xx 10^(9)m^(-3)`.
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-4)
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