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A P-N junction diode can withstand curre...

A `P-N` junction diode can withstand currents up to `10 mA`. Under forward bias, The diode has a potential drop of `0.5 V` across it which is assumed to be independent of current. The maximum voltage of the battery used to forward bias the diode when a resistance of `200 Omega` is connected in series with it is

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Potential drop is 0.5 and current is 10 mA , so resistance of diode is `(0.5)/(10 xx 10^(-3)) = 50 Omega`
Total resistance of circuit is `200 + 50 = 250 Omega`
So maximum current is `(V_(max))/(250)=10 xx 10^(-3) rArr V_(max) = 2.5` volt.
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ALLEN-SEMICONDUCTORS-Part-3(Exercise-4)
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  6. The difference in the variation of resistance with temperature in a me...

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  7. In the middle of the depletion layer of a reverse - biased p - n junc...

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  8. Consider telecommunication through optical fibres. Which of the follow...

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  9. When npn transistor is used as an amplifler

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  10. For a transistor ampliflier in common emiter configuration for load im...

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  11. A piece of copper and another of germanium are cooled from room temper...

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  12. When p-n junction diode is forward biased then

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  13. The electrical conductivity of a semiconductor increases when electrom...

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  18. If the ratio of the concentration of electron to that of holes in a se...

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  19. The circuit has two oppsitely ideal diodes in parallel. What is the cu...

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  20. In the following, which one of the diodes is reverse biased ?

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  21. If the lattice constant of this semiconductor is decreased, then which...

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