Home
Class 11
PHYSICS
A Ge specimen is dopped with Al. The con...

A `Ge` specimen is dopped with `Al`. The concentration of acceptor atoms is `~10^(21) at oms//m^(3)`. Given that the intrinsic concentration of electron hole pairs is `~10^(19)//m^(3)`, the concentration of electron in the speciman is

A

`10^(17)//m^(3)`

B

`10^(15)//m^(3)`

C

`10^(4)//m^(3)`

D

`10^(2)//m^(3)`

Text Solution

Verified by Experts

The correct Answer is:
A

`n_(e)=(n_(i)^(2))/(n_(h))=((10^(19))^(2))/(10^(23))=10^(17)m^(-3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-2)|49 Videos
  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-3)|27 Videos
  • SEMICONDUCTORS

    ALLEN|Exercise Part-3(Exercise-4)|51 Videos
  • PHYSICAL WORLD, UNITS AND DIMENSIONS & ERRORS IN MEASUREMENT

    ALLEN|Exercise EXERCISE-IV|8 Videos
  • WAVES AND OSCILLATIONS

    ALLEN|Exercise Part-1(Exercise-05)[B]|42 Videos

Similar Questions

Explore conceptually related problems

The OH^(-) ion concentration of a solution is 3.2 xx 10^(-4) M . find out the H^(+) ion concentration of the same solution is

A semiconductor crystal has equal electron and hole concentration of 9xx10^(8) m^(-3) it is doped by indium so that the hole concentration increases to 4.5 xx10^(12) m^(-3) calculate the new concentration of free electrons in the doped crystal nad also mention its type

The OH^(-) ion concentration of solution is 3 xx 10^(-4) M . Find out the H^(+) ion concentration of the same solution?

The H^(+) ion concentration of a solution is 4 x 10^(-5) M. Then the OH^(-1) ion concentration of the same solution is

A semiconductor has equal electron and hole concentration of 2xx10^(8)m^(-3) . On doping with a certain impurity, the electron concentration increases to 4xx10^(10)m^(-3), then the new hole concentration of the semiconductor is

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

ALLEN-SEMICONDUCTORS-Part-3(Exercise-1)
  1. In given diagram which p-n junction in reverse biased

    Text Solution

    |

  2. In a p-n junction diode having depletion layer of thickness 10^(-6)m, ...

    Text Solution

    |

  3. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

    Text Solution

    |

  4. Assuming that the junction diode is ideal the current through the diod...

    Text Solution

    |

  5. When two semiconductor of p and n type are brought in to contact, they...

    Text Solution

    |

  6. In a forward biased PN- junction diode, the potential barrier in the d...

    Text Solution

    |

  7. For a common base configuration of PNP transistor (l(C))/(l(E))=0.98, ...

    Text Solution

    |

  8. For a transistor (I(C))/(I(E))=0.96, then current gain for common emit...

    Text Solution

    |

  9. A transistor has an alpha = 0.95 It has change in emitter current of 1...

    Text Solution

    |

  10. For a transistor I(e) = 25 mA and I(b) = 1mA. The value of current gai...

    Text Solution

    |

  11. In Boolean algebra A + B = Y implies that :

    Text Solution

    |

  12. Which of the following gate corresponds to the truth table given below...

    Text Solution

    |

  13. In the Boolean algebra bar(A).bar(B) equals is :-

    Text Solution

    |

  14. Given below are symbols for some logic gates :- The XOR gate and ...

    Text Solution

    |

  15. The symbol represents :-

    Text Solution

    |

  16. The truth table shown below is for which of the following gate :- {:...

    Text Solution

    |

  17. Which of the following gates will have an output of 1 :-

    Text Solution

    |

  18. Following diagram performs the logic function of-

    Text Solution

    |

  19. How many minimum NAND gate are required to obtain NOR gate :-

    Text Solution

    |

  20. The logic behind 'NOR' gate is that it gives

    Text Solution

    |